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June 2002
AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4805 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -8A RDS(ON) < 18m (VGS = -20V) RDS(ON) < 19m (VGS = -10V)
D1
D2
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 25 -8 -6.9 -40 2 1.44 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 50 73 31
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4805
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-8A Static Drain-Source On-Resistance TJ=125C VGS=-20V, ID=-8A VGS=-4.5V, ID=-5A VDS=-5V, ID=-8A -1.7 40 16 20.5 15 16 33 21 -0.75 -1 -2.6 19 25 18 -2.5 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
2076 503 302 2 39 8 11.4 12.7 7 25.2 12 32 26
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-15V, ID=-8A
VGS=-10V, VDS=-15V, RL=1.8, RGEN=3
IF=-8A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 -10V 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 25 RDS(ON) (m) 20 15 10 5 0 0 5 10 15 20 25 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-6V 1.4 ID=-8A 1.3 VGS=-10V 1.2 1.1 1 0.9 VGS=-4.5V -4.5V -8V -6V -5.5V -5V -ID (A) 15 -ID(A) 10 125C VGS=-4V 5 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 25 VDS=-5V 20
VGS=-10V
60 50 ID=-8A RDS(ON) (m) 40 30 20 25C 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C -IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
125C
Alpha and Omega Semiconductor, Ltd.
AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-8A Capacitance (pF) 3000 2500 2000 1500 Coss 1000 500 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss
Ciss
100.0 TJ(Max)=150C TA=25C RDS(ON) 10.0 limited 100s 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s
40 TJ(Max)=150C TA=25C 30 Power (W)
-ID (Amps)
20
10
0 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO - AOS LOGO 4805 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. LN - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO4805
CODE 4805
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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